Pulsed laser ejection of single-crystalline III-V solar cells from GaAs substrates

نویسندگان

چکیده

The best III-V solar cells start out as single-crystalline multilayers on GaAs substrates. Separating these from their growth substrate enables higher performance and wafer reuse, which are both critical for terrestrial cell viability. Here, we remove rigidly bonded, 16 mm2 × 3.5 μm thick devices a using an unfocused Nd:YAG laser pulse. pulse is absorbed by low-band-gap, lattice-matched layer below the device, driving ablation event that ejected crystalline multilayer substrate. Minutes of selective wet-chemical etching device finishing yield 0.1 cm2 with 17.4% power conversion efficiency open-circuit voltage 1.07 V, AM1.5 direct no anti-reflection coating. We show comparable to similar produced via conventional processes. discuss unique process characteristics, such potential separate wafer-sized per

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ژورنال

عنوان ژورنال: Cell reports physical science

سال: 2023

ISSN: ['2666-3864']

DOI: https://doi.org/10.1016/j.xcrp.2023.101449